Datasheet Details
| Part number | AO4302 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 511.13 KB |
| Description | N-Channel MOSFET |
| Datasheet | AO4302-AlphaOmegaSemiconductors.pdf |
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Overview: AO4302 30V N-Channel MOSFET General.
| Part number | AO4302 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 511.13 KB |
| Description | N-Channel MOSFET |
| Datasheet | AO4302-AlphaOmegaSemiconductors.pdf |
|
|
|
30 36 Product Summary The AO4302 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) ESD Protected 100% UIS Tested 100% Rg Tested 30V 23A < 4mΩ < 5mΩ Top View D D D D SOIC-8 Bottom View G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range VDS VGS ID IDM IAS, IAR EAS, EAR PD TJ, TSTG D G S Maximum 30 ±20 23 18 316 49 120 3.6 2.3 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 27 52 11 Max 35 65 15 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 0: February 2011 .aosmd.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4302 | N-Channel MOSFET | Kexin |
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|---|---|
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