Datasheet Details
| Part number | AO4306 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 370.45 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AO4306-AlphaOmegaSemiconductors.pdf |
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Overview: AO4306 30V N-Channel MOSFET General.
| Part number | AO4306 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 370.45 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AO4306-AlphaOmegaSemiconductors.pdf |
|
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Product Summary The AO4306 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and general purpose applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 30V 13A < 11.5mΩ < 15.5mΩ SOIC-8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 13 10.4 100 22 24 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 31 59 Maximum Junction-to-Lead Steady-State RθJL 16 Max 40 75 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev.1.0: October 2014 .aosmd.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4306 | N-Channel MOSFET | Kexin |
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|---|---|
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