AO4462 Datasheet | Alpha & Omega Semiconductors

Description The AO4462 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM .. applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard product AO4462 is Pb-free (meets ROHS & Sony 259 specifications). AO4462L is a Green Product ordering option. AO4462 and AO4462L are electrically identical. Features VDS (V) = 30V (V GS = 10V) ID = 11A RDS(ON) < 16mΩ (VGS = 10V) RDS(ON) < 26mΩ (VGS = 4.5V) D S S S G D D D D SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation Maximum 30 ±20 11 9 40 3.1 2 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) .. Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=11A TJ=125°C VGS=4.5V, ID=10A VDS=5V, ID=11A Min 30 Typ 36 0.003 Max Units V Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance 1 5 100 µA n A V A 1 40 1.85 13.5 18.9 21 25 0.75 3 16 23.6 26 1 4.3 RDS(ON) g FS VSD IS mΩ mΩ S V A p F p F p F Ω n C n C n C n C IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg...