AO4464 Datasheet | Alpha & Omega Semiconductors

Description .. provide Features VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 26mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V) The AO4464 uses advanced trench technology to excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4464 is Pb-free (meets ROHS & Sony 259 specifications). AO4464L is a Green Product ordering option. AO4464 and AO4464L are electrically identical. D S S S G D D D D G SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TA=25°C TA=70°C ID IDM PD TJ, TSTG Maximum 30 ±20 8.5 7.1 50 3 2.1 -55 to 150 Units V V A W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=8.5A Static Drain-Source On-Resistance VGS=4.5V, ID=5A g FS VSD IS Forward Transconductance VDS=5V, ID=5A 10 IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C 1 20 20 29.2 31 17 0.76 1 4.3 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 102 77 3 13.84 VGS=10V, VDS=15V, ID=8.5A 6.74 1.84 3.32 4.5 VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω IF=8.5A, d I/dt=100A/µs 4.2 20.1 4.9 17.2 8.6 6.5 6.3 30 7.5 21 10 3.6 17 8.1 820 26 38 40 1.7 Min 30 0.004 1 5 100 3 Typ Max Units V µA n A V A mΩ mΩ S V A p F p F p F Ω n C n C n C n C ns ns ns ns ns n C STATIC PARAMETERS BVDSS...