AO4709 Datasheet | Alpha & Omega Semiconductors

Description The AO4709 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of nonsynchronous DC-DC converters. Standard Product AO4709 is Pb-free (meets ROHS & Sony 259 specifications). AO4709L is a Green Product ordering option. AO4709 and AO4709L are electrically identical. Features VDS (V) = -30V ID = -8A (VGS = -10V) RDS(ON) < 33mΩ (VGS = -10V) RDS(ON) < 56mΩ (VGS = -4.5V) SCHOTTKY VDS (V) = 30V,IF = 3A, VF<0.5V@1A 1 2 3 4 8 7 6 5 D/K D/K D/K D/K G SOIC-8 .. Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current MOSFET -30 ±20 -8 -6.6 -40 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TA=70°C TA=25°C TA=70°C IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 3 2 -55 to 150 Typ 24 54 21 36 67 25 30 4.4 3.2 30 3 2 -55 to 150 Max 40 75 30 40 75 30 W °C Units °C/W Steady-State Steady-State t ≤ 10s Steady-State Steady-State °C/W Alpha & Omega Semiconductor, Ltd. Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) g FS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-8A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions...