Datasheet Details
| Part number | AO4771L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 251.68 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO4771L-AlphaOmegaSemiconductors.pdf |
|
|
Overview: AO4771L 30V P-Channel MOSFET with Schottky Diode General.
| Part number | AO4771L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 251.68 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO4771L-AlphaOmegaSemiconductors.pdf |
|
|
|
Product Summary AO4771L uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch,or for "standard buck" DC-DC conversion applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) Schottky VKA IF VF (at IF=1A) -30V -4A < 68mΩ < 105mΩ 30V 4A <0.5V Top View SOIC-8 Bottom View Top View A 1 A 2 S 3 G 4 8K 7K 6D 5D Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol MOSFET Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C -4 ID -3 IDM -18 IAS, IAR 11 EAS, EAR 6 Schottky reverse voltage VKA Continuous Forward TA=25°C Current TA=70°C IF TA=25°C Power Dissipation B TA=70°C 2 PD 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics Parameter: MOSFET Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t ≤ 10s Steady-State RθJA 48 74 Maximum Junction-to-Lead Steady-State RθJL 32 Parameter: Schottky Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t ≤ 10s Steady-State RθJA 49 72 Maximum Junction-to-Lead Steady-State RθJL 31 A G K Schottky 30 4 2.5 2 1.3 -55 to 150 Max 62.5 90 40 62.5 90 40 D S Units V V A A mJ W °C Units °C/W °C/W °C/W °C/W °C/W °C/W Rev 0: Sep 2009 .aosmd.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4771 | P-Channel MOSFET | Kexin |
 |
AO4771 | 30V Dual P-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AO4700 | N-Channel Enhancement Mode Field Effect Transistor |
| AO4700 | N-Channel MOSFET |
| AO4701 | P-Channel Enhancement Mode Field Effect Transistor |
| AO4702 | N-Channel Enhancement Mode Field Effect Transistor |
| AO4703 | P-Channel Enhancement Mode Field Effect Transistor |
| AO4704 | N-Channel Enhancement Mode Field Effect Transistor |
| AO4705 | P-Channel Enhancement Mode Field Effect Transistor |
| AO4706 | N-Channel MOSFET |
| AO4707 | P-Channel Enhancement Mode Field Effect Transistor |
| AO4708 | 30V N-Channel MOSFET |