AO4771 Datasheet | Kexin Semiconductor

Features - VDS (V) = -30V - ID = -4 A (VGS = -10V) - RDS(ON) ＜ 68mΩ (VGS = -10V) - RDS(ON) ＜ 105mΩ (VGS = -4.5V) - VDS (V) = 30V, IF = 4A, VF<0.5V@1A +0.04 0.21 -0.02 SOP-8 MOSFET Unit:mm 1.50 0.15 1A 5D 2A 6D 3S 7K 4G 8K - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Schottky Reverse Voltage Continuous Drain Current Pulsed Drain Current TA=25℃ TA=70℃ Continuous Forward Current Avalanche Current TA=25℃ TA=70℃ Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1m H TA=25℃ TA=70℃ t ≤ 10s Steady-State Symbol VDS VGS VKA IDM IF IAS, IAR EAS, EAR Rth JA Rth JL TJ Tstg MOSFET Schottky -30 ±20 -4 -3 -18...