AO4802 Datasheet | Alpha & Omega Semiconductors

Description The AO4802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch. AO4802L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 7A RDS(ON) < 26m Ω (VGS = 10V) RDS(ON) < 30m Ω (VGS = 4.5V) RDS(ON) < 40m Ω (VGS = 2.5V) RDS(ON) < 70m Ω (VGS = 1.8V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 .. 1 2 3 4 8 7 6 5 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation Maximum 30 ±12 7 6 40 2 1.44 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4802, AO4802L Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250 µA VGS=4.5V, V DS=5V VGS=10V, I D=7A TJ=125°C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, I D=6A VGS=2.5V, I D=4A VGS=1.8V, I D=2A g FS VSD IS Forward Transconductance VDS=5V, ID=5A 12 Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current 0.6 30 22 28 25 34 52 17 0.66 1 3 767 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 111 82 1.3 10 VGS=4.5V, V DS=15V, I D=7A 1.2 3.1 5 VGS=10V, VDS=15V, RL=2.2Ω, RGEN=6Ω IF=5A, d I/dt=100A/ µs IF=5A, d I/dt=100A/ µs 5.5 39 4.7 15 7.1 26 36 30 40 70 0.8 Min 30 1 5 100 1 Typ Max Units V µA n A V A mΩ mΩ mΩ mΩ S V A p F p F p F Ω n C n C n C ns ns ns ns ns n C STATIC PARAMETERS BVDSS Drain-Source Breakdown...