AO4824 Datasheet | Alpha & Omega Semiconductors

Description The AO4824 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in DCDC converters. Standard Product AO4824 is Pb-free (meets ROHS & Sony 259 specifications). AO4824L is a Green Product ordering option. AO4824 and AO4824L are electrically identical. Features Q1 VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ RDS(ON) < 27mΩ Q2 VDS(V) = 30V ID=9.8A (VGS = 10V) <13mΩ (VGS = 10V) <15mΩ (VGS = 4.5V) D1 D2 SOIC-8 S2 G2 S1 G1 .. 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 S1 G2 S2 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A ID TA=70°C Pulsed Drain Current B IDM TA=25°C TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET Q1 t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Maximum Junction-to-Lead Max Q1 30 ±20 8.5 6.8 30 2 1.28 -55 to 150 Typ 48 74 35 Max Q2 30 ±12 9.8 7.8 40 2 1.28 -55 to 150 Max 62.5 110 40 Units V V A PD TJ, TSTG Symbol RθJA RθJL Symbol RθJA RθJL W °C Units °C/W Steady-State Parameter: Thermal Characteristics MOSFET Q2 t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient Maximum Junction-to-Lead Typ 48 74 35 Max 62.5 110 40 Units °C/W Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC BVDSS PARAMETERS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=8.5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions 30 ID=250µA, VGS=0V VDS=24V, VGS=0V VDS=0V, VGS= ±20V VDS=VGS ID=250µA...