AO6810 Datasheet | Alpha & Omega Semiconductors

Description .. provide Features VDS (V) = 30V ID = 3.1 A (VGS = 10V) RDS(ON) < 77mΩ (VGS = 10V) RDS(ON) < 120mΩ (VGS = 4.5V) The AO6810 uses advanced trench technology to excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6810 is Pb-free (meets ROHS & Sony 259 specifications). TSOP6 Top View G1 S2 G2 D1 S1 D2 D1 D2 1 6 2 5 3 4 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A Maximum 30 ±20 3.1 2.4 12 1.15 0.73 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics each FET Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 78 106 64 Max 110 150 80 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. .aosmd. N-Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=3.1A Static Drain-Source On-Resistance VGS=4.5V, ID=2A g FS VSD IS Forward Transconductance VDS=5V, ID=3.1A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current TJ=125°C 1 12 54 78 88 4.5 0.79 1 2.5 200 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 42 20 2.5 6.6 VGS=10V, VDS=15V, ID=3.1A 3.2 1.3 1.6 3.4 VGS=10V, VDS=15V, RL=4.7Ω, RGEN=3Ω IF=3.1A, d I/dt=100A/µs 2.5 13.2 1.8 9.5 3.6 13 3.2 8.7 4 240 120 77 1.9 Min 30 1 5 100 3 Typ Max Units V µA n A V A mΩ mΩ S V A p F p F p F Ω n C n C n C n C ns ns ns ns ns n C STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) .. Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) DYNAMIC...