Datasheet4U Logo Datasheet4U.com

AO6810 - Dual N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 30V.
  • ID =3.5 A (VGS = 10V).
  • RDS(ON) < 50mΩ (VGS = 10V).
  • RDS(ON) < 70mΩ (VGS = 4.5V) D1 D2 ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 G1 G2 S1 S2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 +0.1 1.1 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulse.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Dual N-Channel MOSFET AO6810 (KO6810) ■ Features ● VDS (V) = 30V ● ID =3.5 A (VGS = 10V) ● RDS(ON) < 50mΩ (VGS = 10V) ● RDS(ON) < 70mΩ (VGS = 4.5V) D1 D2 ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 G1 G2 S1 S2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 +0.1 1.1 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.