Datasheet Details
| Part number | AOC2800 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 241.19 KB |
| Description | Common-Drain Dual N-Channel MOSFET |
| Datasheet | AOC2800-AlphaOmegaSemiconductors.pdf |
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Overview: AOC2800 mon-Drain Dual N-Channel Enhancement Mode Field Effect Transistor.
| Part number | AOC2800 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 241.19 KB |
| Description | Common-Drain Dual N-Channel MOSFET |
| Datasheet | AOC2800-AlphaOmegaSemiconductors.pdf |
|
|
|
Product Summary The AOC2800 uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.
It is ESD protected.
This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its mon-drain configuration.
| Part Number | Description |
|---|---|
| AOC2802 | Common-Drain Dual N-Channel MOSFET |
| AOC2804 | 20V Common-Drain Dual N-Channel MOSFET |
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| AOC2411 | 30V P-Channel MOSFET |
| AOC2412 | 20V N-Channel MOSFET |
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| AOC2414 | 8V N-Channel MOSFET |
| AOC2415 | 20V P-Channel MOSFET |
| AOC2417 | 20V P-Channel MOSFET |