Datasheet Details
| Part number | AOC2802 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 237.00 KB |
| Description | Common-Drain Dual N-Channel MOSFET |
| Datasheet | AOC2802-AlphaOmegaSemiconductors.pdf |
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Overview: AOC2802 mon-Drain Dual N-Channel Enhancement Mode Field Effect Transistor.
| Part number | AOC2802 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 237.00 KB |
| Description | Common-Drain Dual N-Channel MOSFET |
| Datasheet | AOC2802-AlphaOmegaSemiconductors.pdf |
|
|
|
Product Summary The AOC2802 uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.
It is ESD protected.
This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its mon-drain configuration.
| Part Number | Description |
|---|---|
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