AOD421
AOD421 is P-Channel MOSFET manufactured by Alpha & Omega Semiconductors.
Description
The AOD421 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for load switching. It is ESD protected. Standard Product AOD421 is Pb-free (meets ROHS & Sony 259 specifications). AOD421L is a Green Product ordering option. AOD421 and AOD421L are electrically identical.
TO-252 D-PAK
Features
VDS (V) = -20V ID = -12.5 A (VGS = -10V) RDS(ON) < 75mΩ (VGS = -10V) RDS(ON) < 95mΩ (VGS = -4.5V) RDS(ON) < 145mΩ (VGS = -2.5V) ESD Rating: 2000V HBM
Top View Drain Connected to Tab
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Power Dissipation B Power Dissipation
Maximum -20 ±12 -12.5 -8.9 -30 18.8 9.4 2 1.33 -55 to 175
Units V V A
TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C TA=70°C ID IDM PD PDSM TJ, TSTG
W W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A B Maximum Junction-to-Case
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC
Typ 23 50 6
Max 28 60 8
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-16V, VGS=0V TJ=55°C VDS=0V, VGS=±10V VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-12.5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-3A VGS=-2.5V, ID=-1A g FS VSD IS Forward Transconductance VDS=-5V, ID=-12.5A -1 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current -0.7 -15 61 83 75 110 8.8 -0.81 -8.5 512 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 77 62 9.2 4.6 0.9 2.1 5.2 VGS=-10V, VDS=-10V, RL=0.75Ω, RGEN=3Ω IF=-12.5A, d I/dt=100A/µs 38 17 31 19 6.3 13 620 75 105 95 145 -0.9 Min -20 -0.5 -2.5 ±1 ±10 -1.4 Typ Max Units V µΑ µA µA V A mΩ...