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AOD424 Datasheet 20v N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOD424 20V N-Channel MOSFET General.

General Description

Product Summary The AOD424 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) 100% UIS Tested 100% Rg Tested 20V 45A < 4.4mΩ < 5.7mΩ TO252 DPAK D Top View Bottom View D D S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG G S Maximum 20 ±12 45 35 160 18 15 57 162 100 50 2.5 1.6 -55 to 175 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 16 41 Maximum Junction-to-Case Steady-State RθJC 1.2 Max 20 50 1.5 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 0: February 2011 .aosmd.

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