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AOD442 Datasheet 60v N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOD442/AOI442 60V N-Channel MOSFET General.

General Description

Product Summary The AOD442/AOI442 used advanced trench technology to provide excellent RDS(ON) and low gate charge.

Those devices are suitable for use as a load switch or in PWM applications.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 60V 37A < 20mW < 25mW TO252 DPAK TO-251A Top View Bottom View Top View IPAK Bottom View D D D D S G G S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range VDS VGS ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG S Maximum 60 ±20 37 26 60 7 5 30 45 60 30 2.1 1.3 -55 to 175 G G D S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 17.4 51 1.8 Max 25 60 2.5 S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.0 : August 2023 .aosmd.

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