Datasheet Details
| Part number | AOH3106 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 239.84 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOH3106-AlphaOmegaSemiconductors.pdf |
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Overview: AOH3106 100V N-Channel MOSFET General.
| Part number | AOH3106 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 239.84 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOH3106-AlphaOmegaSemiconductors.pdf |
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Product Summary The AOH3106 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for boost converters and synchronous rectifiers for consumer, tele, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 2A < 360mΩ < 385mΩ SOT223 D Top View Bottom View D D S D G G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=100uH C EAS TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 2 1.5 7 5 1.3 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 33 60 Maximum Junction-to-Lead Steady-State RθJL 30 Max 40 75 40 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 0: Nov 2012 .aosmd.
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|---|---|
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