Datasheet Details
| Part number | AON2800 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 283.49 KB |
| Description | 20V Dual N-Channel MOSFET |
| Datasheet | AON2800_AlphaOmegaSemiconductors.pdf |
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Overview: AON2800 20V Dual N-Channel MOSFET General.
| Part number | AON2800 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 283.49 KB |
| Description | 20V Dual N-Channel MOSFET |
| Datasheet | AON2800_AlphaOmegaSemiconductors.pdf |
|
|
|
The AON2800 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) 20V 4.5A < 47mΩ < 65mΩ ESD Protected DFN 2x2 Package S1 Pin 1 G1 D2 D1 D2 G1 D1 Pin 1 Top Bottom G2 S2 S1 G2 S2 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Ambient B TA=25° C TA=70° C VGS ID IDM PD TJ, TSTG Maximum 20 ±8 4.5 3.8 24 1.5 0.95 -55 to 150 Units V V A W ° C Symbol t ≤ 10s Steady-State t ≤ 10s Steady-State RθJA RθJA Typ 35 65 120 175 Max 45 85 155 235 Units ° C/W ° C/W ° C/W ° C/W Rev 1: August 2011 .aosmd.
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