Datasheet Details
| Part number | AON2803 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 257.55 KB |
| Description | 20V Dual P-Channel MOSFET |
| Datasheet | AON2803_AlphaOmegaSemiconductors.pdf |
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Overview: AON2803 20V Dual P-Channel MOSFET General.
| Part number | AON2803 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 257.55 KB |
| Description | 20V Dual P-Channel MOSFET |
| Datasheet | AON2803_AlphaOmegaSemiconductors.pdf |
|
|
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The AON2803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage as low as 1.8V.
This device is suitable for use as a load switch or in PWM applications.
Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) -20V -3.8A < 70mΩ < 90mΩ < 115mΩ DFN 2x2 Package S1 Pin 1 G1 D2 D1 D2 Pin 1 Top D1 G2 S2 G1 S1 G2 S2 Bottom Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C TA=25° C Power Dissipation A TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Ambient B TA=25° C TA=70° C VGS ID IDM PD TJ, TSTG Maximum -20 ±8 -3.8 -3 -20 1.5 0.95 -55 to 150 Units V V A W ° C Symbol t ≤ 10s Steady-State t ≤ 10s Steady-State RθJA RθJA Typ 35 65 120 175 Max 45 85 155 235 Units ° C/W ° C/W ° C/W ° C/W Rev 0: August 2012 .aosmd.
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