Datasheet Details
| Part number | AON6578 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 283.96 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON6578-AlphaOmegaSemiconductors.pdf |
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Overview: AON6578 30V N-Channel AlphaMOS General.
| Part number | AON6578 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 283.96 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON6578-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application • DC/DC Converters in puting, Servers, and POL • Isolated DC/DC Converters in Tele and Industrial 100% UIS Tested 100% Rg Tested 30V 70A < 4.4mΩ < 7.8mΩ Top View DFN5X6 Bottom View PIN1 Top View 1 8 2 7 3 6 4 5 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.05mH C EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 70 45 180 28 23 34 29 36 35 14 5.6 3.6 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 18 40 2.75 Max 22 55 3.5 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.1.0: August 2013 .aosmd.
Page 1 of 6 AON6578 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.6 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current V 1 µA 5 ±100
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