Datasheet Details
| Part number | AONS66407 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 406.51 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AONS66407-AlphaOmegaSemiconductors.pdf |
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Overview: AONS66407 40V N-Channel AlphaSGT TM General.
| Part number | AONS66407 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 406.51 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AONS66407-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS 2.0 and Halogen-Free pliant Applications • Synchronous Rectification Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 40V 310A < 0.85mΩ < 1.28mΩ DFN5X6 D Top View Bottom View Top View PIN1 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Orderable Part Number AONS66407 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 310 239 645 69 55 65 634 215 86 7.3 4.7 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 14 40 0.43 Max 17 50 0.58 Units °C/W °C/W °C/W Rev.1.1: January 2024 .aosmd.
Page 1 of 6 AONS66407 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250μA, VGS=0V VDS=40V, VGS=0V Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A Forward Transconductance Diode Forward Voltage VGS=4.5V, ID=20A VDS=5V, ID=20A IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacit
| Part Number | Description |
|---|---|
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| AONS66406 | 40V N-Channel MOSFET |
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