Datasheet Details
| Part number | AONS66408 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 433.52 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AONS66408-AlphaOmegaSemiconductors.pdf |
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Overview: AONS66408 40V N-Channel AlphaSGT TM General.
| Part number | AONS66408 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 433.52 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AONS66408-AlphaOmegaSemiconductors.pdf |
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• Trench Power AlphaSGTTM technology • Very Low RDS(ON) • Excellent gate charge x RDS(ON) product (FOM) • PB-free lead plating, ROHS plaint, Halogen-free Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 85A < 3.1mΩ < 4.4mΩ Applications • High frequency switching for DCDC rectification • Synchronous rectification MOSFET for SMPS 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Orderable Part Number AONS66408 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 85 59 200 33 27 40 80 48 19 6.2 4 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 2 Max 20 50 2.6 Units °C/W °C/W °C/W Rev.2.0: June 2022 .aosmd.
Page 1 of 6 AONS66408 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250μA, VGS=0V VDS=40V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A Forward Transconductance Diode Forward Voltage VGS=4.5V, ID=20A VDS=5V, ID=20A IS=1A, VGS=0V Maximum Body-Diode Continuous Current
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|---|---|
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