AOD419 Datasheet | Alpha & Omega Semiconductors

Description The AOD419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD419 is Pb-free (meets ROHS & Sony 259 specifications). AOD419L is a Green Product ordering option. AOD419 and AOD419L are electrically identical. TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Features VDS (V) = -40V (V GS = -10V) ID = -20A RDS(ON) < 40mΩ (VGS = -10V) RDS(ON) < 65mΩ (VGS = -4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current C Avalanche Current Repetitive avalanche energy L=0.3m H TC=25°C Power Dissipation Maximum -40 ±20 -20 -18 -60 -20 60 50 25 2.5 1.6 -55 to 175 Units V V A A m J W W °C TA=25°C TA=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=100°C TA=25°C TA=70°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 16.7 40 2.5 Max 25 50 3 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-10m A, VGS=0V VDS=-32V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-20A RDS(ON) g FS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-20A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C -1 -60 33 45 52 16 -0.75 -1 -20 657 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 143 63 6.5 14.1 VGS=-10V, VDS=-20V, ID=-20A 7 2.2 4.1 8 VGS=-10V, VDS=-20V, RL=1Ω, RGEN=3Ω IF=-20A, d I/dt=100A/µs 12.2 24 12.5 23.2 18.2 850 185 90 40 54 65 -2.2 Min -40 -1 -5 ±100 -3...