AOD419 Datasheet P-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: .. AOD419 P-Channel Enhancement Mode Field Effect Transistor General.

Datasheet Details

The AOD419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.

Standard Product AOD419 is Pb-free (meets ROHS & Sony 259 specifications).

VDS (V) = -40V (V GS = -10V) ID = -20A RDS(ON) < 40mΩ (VGS = -10V) RDS(ON) < 65mΩ (VGS = -4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current C Avalanche Current Repetitive avalanche energy L=0.3mH TC=25°C Power Dissipation B C Maximum -40 ±20 -20 -18 -60 -20 60 50 25 2.5 1.6 -55 to 175 Units V V A A mJ W W °C TA=25°C G TA=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=.

Brand Logo	Part Number	Description	Manufacturer
	AOD4191L	P-Channel MOSFET	Alpha - Omega Semiconductors

Part Number	Description