Datasheet Summary
AO4470 N-Channel Enhancement Mode Field Effect Transistor
General Description
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Features
VDS (V) = 30V ID = 18A RDS(ON) < 5.5mΩ RDS(ON) < 6.2mΩ (V GS = 10V) (VGS = 10V) (VGS = 4.5V)
The AO4470 uses advanced trench technology to excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Standard product AO4470 is Pb-free (meets ROHS & Sony 259 specifications). AO4470L is a Green Product ordering option. AO4470 and AO4470L are electrically identical.
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