Datasheet Summary
AO4812A Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4812A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in buck converters. AO4812A is Pb-free (meets ROHS & Sony 259 specifications). AO4812AL is a Green Product ordering option. AO4812A and AO4812AL are electrically identical.
Features
VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 28m Ω (VGS = 10V) RDS(ON) < 42m Ω (VGS = 4.5V)
D1 S2 G2 S1 G1 D2 D2 D1 D1
D2
..
1 2 3 4
8 7 6 5
G1 S1
G2...
