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AO4812
Dual N-Channel 30-V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = 10 V 30
0.026 at VGS = 4.5 V
ID (A) 6.8 6.0
Qg (Typ.) 15 nC
SO-8
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Top View
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET
• 100 % UIS Tested
• 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Set Top Box • Low Current DC/DC
D1
D2
G1
S1 N-Channel MOSFET
G2
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
30
V
VGS
± 20
TC = 25 °C
6.8a
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
5.6 6.2b, c
Pulsed Drain Current
TA = 70 °C
5.
AO4812 Datasheet
