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AO4812 Datasheet 30v Dual N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO4812 30V Dual N-Channel MOSFET General.

General Description

The AO4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in buck converters.

Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 100% UIS Tested 100% Rg Tested 30V 6A < 30mW < 42mW Top View SOIC-8 Bottom View Top View S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 6 5 30 10 5 2 1.3 -55 to 150 D1 G2 S1 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 48 74 Maximum Junction-to-Lead Steady-State RqJL 32 Max 62.5 90 40 D2 S2 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 9.1: March 2024 .aosmd.

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