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AO4813 Datasheet 30v Dual P-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO4813 30V Dual P-Channel MOSFET General.

General Description

Product Summary The AO4813 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V) 100% UIS Tested 100% Rg Tested -30V -7.1A < 25mW < 40mW SOIC-8 Top View Bottom View D Pin1 Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -7.1 -5.6 -40 -27 36 2 1.3 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 48 74 Maximum Junction-to-Lead Steady-State RqJL 32 Max 62.5 90 40 D S Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 9.1: March 2024 .aosmd.

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