Datasheet Summary
AO4850 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4850 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs may be used in H-bridge, Inverters and other applications. AO4850 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 75V (VGS = 10V) ID = 3.1A RDS(ON) < 130mΩ (VGS = 10V) RDS(ON) < 165mΩ (VGS = 4.5V)
D1 S2 G2 S1 G1
..
D2
1 2 3 4
8 7 6 5
D2 D2 D1 D1
G1 S1
G2...
