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AO4850 - Dual N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 75V.
  • ID = 3.1A (VGS = 10V).
  • RDS(ON) ＜ 130mΩ (VGS = 10V).
  • RDS(ON) ＜ 165mΩ (VGS = 4.5V) SOP-8 +0.04 0.21 -0.02 D1 D2 MOSFET Unit:mm 1.50 0.15 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 G1 G2 S1 S2.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Resistanc.

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SMD Type Dual N-Channel MOSFET AO4850 (KO4850) ■ Features ● VDS (V) = 75V ● ID = 3.1A (VGS = 10V) ● RDS(ON) ＜ 130mΩ (VGS = 10V) ● RDS(ON) ＜ 165mΩ (VGS = 4.5V) SOP-8 +0.04 0.21 -0.02 D1 D2 MOSFET Unit:mm 1.50 0.15 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 G1 G2 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ L=0.3mH TA=25℃ TA=70℃ Symbol VDS VGS ID IDM IAR EAR PD RthJA RthJL TJ Tstg 10 Sec Steady State 75 ±25 3.1 2.3 2.4 1.8 15 10 15 2 1.1 1.3 0.7 62.