AO4850 Datasheet | Alpha & Omega Semiconductors

Description The AO4850 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs may be used in H-bridge, Inverters and other applications. AO4850 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 75V (VGS = 10V) ID = 3.1A RDS(ON) < 130mΩ (VGS = 10V) RDS(ON) < 165mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 .. D2 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation Avalanche Current B Symbol VDS VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD IAR EAR TJ, TSTG Maximum 10 Sec Steady State 75 ±25 3.1 2.4 15 2 1.3 10 15 -55 to 150 1.1 0.7 2.3 1.8 Units V V A W A m J °C Repetitive avalanche energy 0.3m H B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 50 82 41 Max 62.5 110 50 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. .aosmd. Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) g FS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=2A Forward Transconductance VDS=5V, ID=3.1A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=10m A, VGS=0V VDS=75V, VGS=0V TJ=55°C VDS=0V, VGS= ±25V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=3.1A TJ=125°C 1 15 105 158 126 10 0.77 1 2.5 290 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 54 24 2.4 5.14 VGS=10V, VDS=30V, ID=3.1A 2.34 0.97 1.18 4 VGS=10V, VDS=30V, RL=9.7Ω, RGEN=3Ω IF=3.1A, d I/dt=100A/µs 3.4 14.4 2.4 30.2 21.5 45 3.5 7 380 130 195 165 2.3 Min 75 1 5 100 3 Typ...