AO4914 Datasheet | Alpha & Omega Semiconductors

30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary The AO4914 uses advanced trench technology to provide Q1(N-Channel) excellent RDS(ON) and low gate charge. The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the VDS= 30V ID= 8A (VGS=10V) RDS(ON) <20.5mΩ synchronous MOSFET to boost efficiency further. RDS(ON) <28mΩ Q2(N-Channel) 30V 8A (VGS=10V) RDS(ON) <20.5mΩ (VGS=10V) RDS(ON) <28mΩ (VGS=4.5V) ESD Protected 100% UIS Tested 100% Rg Tested ESD Protected 100% UIS Tested 100% Rg Tested SCHOTTKY VDS = 30V, IF = 3A, VF<0.5V@1A SOIC...