Datasheet Summary
AO4918 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4918 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard Product AO4918 is Pb-free (meets ROHS & Sony 259 specifications). AO4918L is a Green Product ordering option. AO4918 and AO4918L are electrically identical.
Features
Q1
Q2
VDS (V) = 30V
VDS(V) = 30V
ID = 9.3A (VGS = 10V) ID=8.3A
RDS(ON) < 14.5mΩ <18mΩ (VGS = 10V)
RDS(ON) <...
