Datasheet Summary
AO4918A Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4918A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in DCDC converters. A Schottky diode is co-packaged in .. parallel with the synchronous MOSFET to boost efficiency further. AO4918A is Pb-free (meets ROHS & Sony 259 specifications). AO4918AL is a Green Product ordering option. AO4918A and AO4918AL are electrically identical.
Features
Q1
VDS (V) = 30V ID = 9.3A RDS(ON) < 14.5mΩ RDS(ON) < 16mΩ
Q2
VDS(V) = 30V ID=8.5A <18mΩ (VGS = 10V) <27mΩ...
