Datasheet Summary
AO6401A P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and .. operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO6401A is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS = -30V ID = -5.0A RDS(ON) < 44mΩ RDS(ON) < 55mΩ RDS(ON) < 82mΩ (VGS = -10V) (VGS = -10V) (VGS = -4.5V) (VGS = -2.5V)
D TSOP6 Top View D D G 1 6 2 5 3 4 D D S G...
