Download AO6409L Datasheet PDF
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Datasheet Summary

Rev 2: Nov 2004 AO6409, AO6409L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor General Description The AO6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO6409L ( Green Product ) is offered in a lead-free package. Features VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 56mΩ (VGS = -2.5V) RDS(ON) < 75mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSOP6 Top View D D G 1 6 2 5 3 4 D D S...