Datasheet Summary
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AO8403 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8403 is Pb-free (meets ROHS & Sony 259 specifications). AO8403L is a Green Product ordering option. AO8403 and AO8403L are electrically identical.
Features
VDS (V) = -20V ID = -4 A (VGS = -4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 52mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM
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