Datasheet Summary
20V mon-Drain Dual N-Channel MOSFET
General Description
The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its mon-drain configuration.
Product Summary
VDS ID (at VGS=4.5V) RDS(ON) (at VGS= 4.5V) RDS(ON) (at VGS = 4.0V) RDS(ON) (at VGS = 3.1V) RDS(ON) (at VGS = 2.5V) RDS(ON) (at VGS = 1.8V)
ESD protected
20V 7A < 20mW < 20.5mW < 21.5mW < 23mW < 28mW
TSSOP8
Top View
Bottom View
TSSOP-8 Top View
D1
D2
D1/D2 1 S1 2
S1 3 G1 4
8 D1/D2 7 S2
6 S2 5 G2
G1 1.8KW
G2 1.8KW
Pin...
