• Part: AO8816
  • Description: Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
  • Manufacturer: Alpha & Omega Semiconductors
  • Size: 140.91 KB
Download AO8816 Datasheet PDF
AO8816 datasheet preview
AO8816 page 2
Page 2
AO8816 page 3
Page 3

Datasheet Summary

.. AO8816 mon-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO8816 is Pb-free (meets ROHS & Sony 259 specifications). AO8816L is a Green Product ordering option. AO8816 and AO8816L are electrically identical. Features VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 17mΩ (VGS = 4.5) RDS(ON) < 23mΩ (VGS = 2.5V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2 G1...

Related Alpha & Omega Semiconductors Datasheets

Part Number Description
AO8810 20V Common-Drain Dual N-Channel MOSFET
AO8814 20V Common-Drain Dual N-Channel MOSFET
AO8818 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor
AO8801A 20V P-Channel MOSFET