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AO8818 Datasheet Common-drain Dual N-channel Enhancement Mode Field Effect Transistor

Manufacturer: Alpha & Omega Semiconductors

Overview: .. AO8818 mon-Drain Dual N-Channel Enhancement Mode Field Effect.

General Description

The AO8818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its mon-drain configuration.

Key Features

  • VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 20mΩ (VGS = 4.5V) RDS(ON) < 27mΩ (VGS = 2.5V) ESD Rating: 1500V HBM D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 ±12 7 5.5 30 1.5 0.96 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°.

More Datasheets from Alpha & Omega Semiconductors

Part Number Description
AO8810 20V Common-Drain Dual N-Channel MOSFET
AO8814 20V Common-Drain Dual N-Channel MOSFET
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AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor
AO8801A 20V P-Channel MOSFET
AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor
AO8807 Dual P-Channel FET
AO8808 Dual N-Channel Enhancement Mode Field Effect Transistor
AO8808A 20V Dual N-Channel MOSFET
AO8820 20V Common-Drain Dual N-Channel MOSFET

AO8818 Distributor