AO8816 Datasheet Common-drain Dual N-channel Enhancement Mode Field Effect Transistor

Manufacturer: Alpha & Omega Semiconductors

Overview: .. AO8816 mon-Drain Dual N-Channel Enhancement Mode Field Effect.

Datasheet Details

Part number	AO8816
Manufacturer	Alpha & Omega Semiconductors
File Size	140.91 KB
Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO8816_AlphaOmegaSemiconductors.pdf

The AO8816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Standard Product AO8816 is Pb-free (meets ROHS & Sony 259 specifications).

VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 17mΩ (VGS = 4.5) RDS(ON) < 23mΩ (VGS = 2.5V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 ±12 8 6 30 1.5 1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG.

Part Number	Description
AO8810	20V Common-Drain Dual N-Channel MOSFET
AO8814	20V Common-Drain Dual N-Channel MOSFET
AO8818	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8801	Dual P-Channel Enhancement Mode Field Effect Transistor
AO8801A	20V P-Channel MOSFET
AO8803	Dual P-Channel Enhancement Mode Field Effect Transistor
AO8807	Dual P-Channel FET
AO8808	Dual N-Channel Enhancement Mode Field Effect Transistor
AO8808A	20V Dual N-Channel MOSFET
AO8820	20V Common-Drain Dual N-Channel MOSFET