• Part: AO8818
  • Description: Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
  • Manufacturer: Alpha & Omega Semiconductors
  • Size: 180.75 KB
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Datasheet Summary

.. AO8818 mon-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its mon-drain configuration. Standard Product AO8818 is Pb-free (meets ROHS & Sony 259 specifications). AO8818L is a Green Product ordering option. AO8818 and AO8818L are electrically identical. Features VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 20mΩ...

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