Datasheet Summary
12V mon-Drain Dual N-Channel MOSFET MRigidCSP TM
General Description
- Trench Power MOSFET technology
- Low RSS(ON)
- With ESD protection to improve battery performance and _.safety
- mon drain configuration for design simplicity
- RoHS 2.0 and Halogen-Free pliant
Applications
- Battery protection switch
- Mobile device battery charging and discharging
Product Summary
RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V)
Typical ESD protection
12V
< 2.5mΩ < 2.8mΩ < 3.5mΩ < 4.9mΩ
HBM Class 2
MRigidCSPTM 2.08x1.45_10
Top View
Bottom View
Pin1
Top View
PIN1
G1
Pin1
1,2,3,4 : Source1(FET1) 6,7,8,9 :...