Datasheet Summary
20V Dual N-Channel MOSFET
General Description
The AON3810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its mondrain configuration.
Product Summary
VDS (V) = 20V ID = 8.5A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) RDS(ON) < 39mΩ (VGS = 2.5V) RDS(ON) < 55mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
Top View
DFN 3x3 Bottom View
Top View
S2 1
G2 2
S1 3
G1 4
D2 D2
G1 D1 D1
1.6KΩ
Pin...