Datasheet Summary
24V Dual N-Channel αMOS™
General Description
- Trench Power αMOS™ LV technology
- Low RDS(ON)
- Low Gate Charge
- ESD protection
- RoHS and Halogen-Free pliant
Applications
- Battery protection switch
- Mobile device battery charging and discharging
Product Summary
VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=4.0V) RDS(ON) (at VGS=3.7V) RDS(ON) (at VGS=3.1V) RDS(ON) (at VGS=2.5V)
Typical ESD protection
24V 8A < 13.5mΩ < 14mΩ < 15mΩ < 17mΩ < 21mΩ
HBM Class 2
Top View
DFN 3x3 Bottom View
Pin 1
Top View
S2 1 G2 2 S1 3 G1 4
7 6 5
D1/D2 D1/D2 D1/D2 D1/D2
G1
D1 G2
S1
D2 S2
Orderable Part Number
Package Type
DFN...