Datasheet Summary
30V Dual Asymmetric N-Channel MOSFET
General Description
- Bottom source technology
- Very Low RDS(ON) at Vgs 4.5V
- Low Gate Charge
- High Current Capability
- RoHS 2.0 and Halogen-Free pliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
Q1
Q2
30V 30V
97A 60A
< 3.5mΩ < 4.4mΩ
< 4.5mΩ < 5.6mΩ
Applications
- Buck-boost Converters in puting
- Point of Load Converter
- See Note H
DFN3.3x3.3D
100% UIS Tested 100% Rg Tested
Top View
Bottom View
Q2
Q1
Pin 1
Pin 1
Orderable Part Number
Package Type Form
DFN3.3x3.3D...