Datasheet Summary
30V Dual Asymmetric N-Channel MOSFET
General Description
- Bottom source technology
- Very Low RDS(ON) at Vgs 4.5V
- Low Gate Charge
- High Current Capability
- RoHS 2.0 and Halogen-Free pliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
Q1
Q2
30V 30V
134A 110A
< 2.4mΩ < 2.3mΩ
< 2.9mΩ < 2.9mΩ
Applications
- Buck-boost Converters in puting
- Point of Load Converter
- See Note I
100% UIS Tested 100% Rg Tested
DFN3.3x3.3C
Top View Q1
Bottom View
Pin 1
Orderable Part Number
Pin 1
Package Type
DFN3.3x3.3C
Q2
Form...