Datasheet Summary
AOTF470 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOTF470 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. -RoHs pliant
Features
VDS (V) = 75V
ID= 50 A
(VGS= 10V)
RDS(ON) < 11.5mΩ (VGS = 10V)
G DS
AOTF470...