BLA6G1011-200R Overview
200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Test information Typical RF performance at Tcase = 25 C.
BLA6G1011-200R Key Features
- Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA
- Output power = 200 W
- Power gain = 20 dB
- Efficiency = 65 %
- Easy power control
- Integrated ESD protection
- Enhanced ruggedness
- High efficiency
- Excellent thermal stability
- Designed for b
BLA6G1011-200R Applications
- Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA: Output power = 200 W Power gain = 20