BLA6G1011L-200RG - Power LDMOS transistor

This page provides the datasheet information for the BLA6G1011L-200RG, a member of the BLA6G1011-200R Power LDMOS transistor family.

Product Overview

Ampleon

Part number	BLA6G1011L-200RG
Manufacturer	Ampleon
File Size	355.57 KB
Description	Power LDMOS transistor
Datasheet	BLA6G1011L-200RG Datasheet
Additional preview pages of the BLA6G1011L-200RG datasheet.

200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

Table 1.

Typical RF performance at Tcase = 25 C.

Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA:.
Output power = 200 W.
Power gain = 20 dB.
Efficiency = 65 %.
Easy power control.
Integrated ESD protection.
Enhanced ruggedness.
High efficiency.
Excellent thermal stability.
Designed for b.

Other Datasheets by Ampleon

Published: Apr 26, 2018 |